PART |
Description |
Maker |
CY37032 CY37032P44-125AC CY37032P44-125AI CY37032P |
5V, 3.3V, ISR⒙ HIGH-PERFORMANCE CPLDS 5V, 3.3V, ISR??High-Performance CPLDs 5V/ 3.3V/ ISR High-Performance CPLDs 5V, 3.3V, ISR⑩ High-Performance CPLDs 5V, 3.3V, ISR High-Performance CPLDs
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CYPRESS[Cypress Semiconductor]
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CY37064P100-200AC CY37128VP100-83AC CY37128VP100-8 |
5V, 3.3V, ISRTM High-Performance CPLDs 5V, 3.3V, ISRTM High-Performance CPLDs Programmable Logic : Programmable Logic Devices 5V, 3.3V, ISR<SUP>TM</SUP> High-Performance CPLDs
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Cypress
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ULTRA37000 37000 |
5V 3.3V, ISR High-Performance CPLDs From old datasheet system
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Cypress
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PT6305B |
3.3 Vout 3 Amp 5V-Input Adjustable Step-Down ISR
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TI
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ISR1013-562K ISR1013-102K ISR1013-103K ISR1013-122 |
THRU-HOLE INDUCTORS ISR Series: Shielded Fixed Inductor
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RFE international
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M38030F2L-XXXHP M38030F2L-XXXKP M38030F2L-XXXSP M3 |
256 Kbit (32K x 8) nvSRAM; Organization: 32Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 256 Kb; Package: SOIC 3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: 0 to 70 C 256K (32K x 8) Static RAM; Density: 256 Kb; Organization: 32Kb x 8; Vcc (V): 4.50 to 5.50 V; Three-PLL General Purpose FLASH Programmable Clock Generator; Voltage (V): 3.3 V; Input Range: 1 MHz to 166 MHz; Output Range: 1 MHz to 200 MHz; Outputs: 6 5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 256; Vcc (V): 3.3; fMax (MHz): 66; tPD (ns): 12 8-Mbit (512K x 16) Static RAM; Density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 2.20 to 3.60 V; 9-Mbit (256K x 36/512K x 18) Pipelined SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V 18-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V Four Output PCI-X and General Purpose Buffer; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 140 MHz; Outputs: 4; Operating Range: 0 to 70 C 18-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 2.4 to 2.6 V 4-Mbit (512K x 8) Static RAM; Density: 4 Mb; Organization: 512Kb x 8; Vcc (V): 4.50 to 5.50 V; 4-Mbit (256K x 16) Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 2.20 to 3.60 V; 64K x 16 Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 3.0 to 3.6 V; 1-Mbit (64K x 16) Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 4.5 to 5.5 V; 9-Mbit (256K x 36/512K x 18) Pipelined SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V 1-Mbit (64K x 16) Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 3.0 to 3.6 V; 4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 16-Mbit (1M x 16 / 2M x 8) Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 4.50 to 5.50 V; 4K x 16/18 and 8K x 16/18 Dual-Port Static RAM with SEM, INT, BUSY; Density: 128 Kb; Organization: 8Kb x 16; Vcc (V): 4.5 to 5.5 V; Speed: 35 ns 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 2.4 to 2.6 V 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V 8-Mbit (512K x 16) Static RAM; Density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 4.50 to 5.50 V; 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V 256K x 16 Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 4.5 to 5.5 V; 9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM; Architecture: Standard Sync, Pipeline DCD; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V 4-Mbit (256K x 16) Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 3.0 to 3.6 V; 8-Mbit (1024K x 8) Static RAM; Density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 2.20 to 3.60 V; 18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V 256K x 16 Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 3.0 to 3.6 V; 8-Mbit (1M x 8) Static RAM; Density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 2.20 to 3.60 V; 3.3V Zero Delay Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 8; Operating Range: -40 to 85 C Programmable Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: -40 to 85 C 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V 18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V 512K x 8 Static RAM; Density: 4 Mb; Organization: 512Kb x 8; Vcc (V): 4.5 to 5.5 V; 18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 2.4 to 2.6 V 2.5V or 3.3V, 200-MHz, 1:12 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 12; Operating Range: -40 to 85 C 3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: -40 to 85 C 2M x 8 Static RAM; Density: 16 Mb; Organization: 2Mb x 8; Vcc (V): 3.0 to 3.6 V; 16 Mbit (512K X 32) Static RAM; Density: 16 Mb; Organization: 512Kb x 32; Vcc (V): 3.0 to 3.6 V; 3.3V Zero Delay Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 8; Operating Range: 0 to 70 C 8-Mbit (1M x 8) Static RAM; Density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 3.0 to 3.6 V; 5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 5; fMax (MHz): 125; tPD (ns): 6 2-Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 3.0 to 3.6 V; 16-Mbit (1M x 16) Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 3.0 to 3.6 V; 4-Mbit (256K x 18) Pipelined DCD Sync SRAM; Architecture: Standard Sync, Pipeline DCD; Density: 4 Mb; Organization: 256Kb x 18; Vcc (V): 3.1 to 3.6 V 512K (32K x 16) Static RAM; Density: 512 Kb; Organization: 32Kb x 16; Vcc (V): 3.0 to 3.6 V; 4-Mbit (128K x 36) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 4 Mb; Organization: 128Kb x 36; Vcc (V): 3.1 to 3.6 V 1M x 16 Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 3.0 to 3.6 V; Programmable Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: 0 to 70 C 3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 9; Operating Range: 0 to 70 C MoBL(R) 2 Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 2.20 to 3.60 V; Rambus(R) XDR(TM) Clock Generator; VDD: 2.5 V; Input Frequency: 100 MHz to 133 MHz; Output Frequency: 300 MHz to 800 MHz; # Out: 4 2-Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 2.20 to 3.60 V; 4-Mbit (128K x 36) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 4 Mb; Organization: 128Kb x 36; Vcc (V): 3.1 to 3.6 V 5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 5; fMax (MHz): 167; tPD (ns): 7 2.5V or 3.3V, 200-MHz, 1:10 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 10; Operating Range: 0 to 70 C 5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 5; fMax (MHz): 100; tPD (ns): 7 5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 5; fMax (MHz): 125; tPD (ns): 7 18-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V Low Voltage Programmable Skew Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: 0 to 70 C Spread Spectrum Clock Generator; Voltage(V): 3.3 V; Input Frequency Range: 25 MHz to 100 MHz; Output Frequency Range: 25 MHz to 100 MHz; Operating Range: 0 to 70 C; Package: SOIC Low Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: 0 to 70 C 5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 3.3; fMax (MHz): 143; tPD (ns): 9 单芯位CMOS微机 5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 5; fMax (MHz): 154; tPD (ns): 6 单芯位CMOS微机 SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机 5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 3.3; fMax (MHz): 100; tPD (ns): 9 单芯位CMOS微机 5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 3.3; fMax (MHz): 83; tPD (ns): 10 单芯位CMOS微机 5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 5; fMax (MHz): 125; tPD (ns): 6 单芯位CMOS微机 Three-PLL General-Purpose EPROM Programmable Clock Generator; Voltage (V): 3.3/5.0 V; Input Range: 1 MHz to 30 MHz; Output Range: .077 MHz to 100 MHz; Outputs: 6 单芯位CMOS微机 8-Mbit (512K x 16) MoBL(R) Static RAM; Density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机 High Speed Low Voltage Programmable Skew Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 3.75 MHz to 110 MHz; Outputs: 8; Operating Range: 0 to 70 C 单芯位CMOS微机 3.3V SDRAM Buffer for Mobile PCs with 4 SO-DIMMs; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 100 MHz; Outputs: 10; Operating Range: 0 to 70 C 单芯位CMOS微机 3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 9; Operating Range: -40 to 85 C 单芯位CMOS微机 Programmable Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: -40 to 85 C 单芯位CMOS微机 2-Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 3.0 to 3.6 V; 单芯位CMOS微机 MoBL(R) 1 Mbit (128K x 8) Static RAM; Density: 1 Mb; Organization: 128Kb x 8; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机 18-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机 1-Mbit (128K x 8) Static RAM; Density: 1 Mb; Organization: 128Kb x 8; Vcc (V): 4.50 to 5.50 V; 单芯位CMOS微机 4-Mbit (256K x 18) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 4 Mb; Organization: 256Kb x 18; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机 2-Mbit (64K x 32) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 2 Mb; Organization: 64Kb x 32; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机 200-MHz Field Programmable Zero Delay Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 10 MHz to 200 MHz; Outputs: 12; Operating Range: -40 to 85 C 单芯位CMOS微机 2-Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机 SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯8位CMOS微机 2-Mbit (256K x 8) Static RAM; Density: 2 Mb; Organization: 256Kb x 8; Vcc (V): 2.20 to 3.60 V; 单芯8位CMOS微机 Very Low Jitter Field and Factory Programmable Clock Generator; Voltage (V): 3.3 V; Input Range: 10 MHz to 133 MHz; Output Range: 20 MHz to 200 MHz; Outputs: 2 单芯位CMOS微机 3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: 0 to 70 C 单芯位CMOS微机 3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: -40 to 85 C 单芯位CMOS微机 Three-PLL General Purpose FLASH Programmable Clock Generator; Voltage (V): 3.3 V; Input Range: 1 MHz to 166 MHz; Output Range: 0 MHz to 200 MHz; Outputs: 3 单芯位CMOS微机 1:8 Clock Fanout Buffer; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 350 MHz; Outputs: 8; Operating Range: -40 to 85 C 单芯位CMOS微机 Quad PLL Clock Generator with 2-Wire Serial Interface; Voltage (V): 2.5/3.3 V; Input Range: 27 MHz to 27 MHz; Output Range: 4.2 MHz to 166 MHz; Outputs: 5 单芯位CMOS微机 2.5V or 3.3V, 200-MHz, 1:12 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 12; Operating Range: 0 to 70 C 单芯位CMOS微机 3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 9; Operating Range: 0 to 70 C 单芯位CMOS微机 High Speed Multi-phase PLL Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 24 MHz to 200 MHz; Outputs: 11; Operating Range: 0 to 70 C 单芯位CMOS微机 2.5V or 3.3V, 200-MHz, 1:18 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 18; Operating Range: -40 to 85 C 单芯位CMOS微机 -bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 位AVR微控制器具有8K字节的系统内可编程闪 2.5V or 3.3V, 200-MHz, 1:12 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 12; Operating Range: 0 to 70 C 1:8 Clock Fanout Buffer; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 350 MHz; Outputs: 8; Operating Range: 0 to 70 C Spread Spectrum Clock Generator; Voltage(V): 3.3 V; Input Frequency Range: 4 MHz to 32 MHz; Output Frequency Range: 4 MHz to 32 MHz; Operating Range: 0 to 70 C; Package: SOIC High Speed Low Voltage Programmable Skew Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 3.75 MHz to 110 MHz; Outputs: 8; Operating Range: 0 to 70 C 5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 3.3; fMax (MHz): 100; tPD (ns): 9
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Renesas Electronics Corporation. Renesas Electronics, Corp.
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A29L040A-70 A29L040A-70F A29L040AX-70 A29L040AX-70 |
Insulation Tester (Megohmmeter); Resistance Measuring Range:0 to 9999 Ohm; Accuracy: /-3% Rdg /- 5 LSD Less Than 1Gohm; Display Technology:LED; Range:0 - 4.000/40.00/400.0/4000 Mohm; Test Voltage:1000V; Voltage Rating:1000V RoHS Compliant: NA 512K X 8 Bit CMOS 3.0 Volt-only, Uniform Sector Flash Memory FUSE,SIBA,70 125 40,.5A/700V RoHS Compliant: NA Digital Multimeter Clamp; DMM Type:Clamp; No. of Digits/Alpha:3-3/4; DMM Response Type:True RMS; Calibrated:No; Current Measuring Range:1000A; Current Setting AC:1000A; Current Setting DC:1000A RoHS Compliant: NA MINI-CLAMP DMM, 400A RoHS Compliant: NA Replaced by PT78NR109,PT78ST109 : 9Vout 1.5A Wide Input Positive Step-Down ISR 3-SIP MODULE -40 to 85 Replaced by PT78NR108,PT78ST108 : 8Vout 1.5A Wide Input Positive Step-Down ISR 3-SIP MODULE -40 to 85 12k × 8位CMOS 3.0伏只,统一部门快闪记忆 Insulation Tester (Megohmmeter); Resistance Measuring Range:0 to 4000 MOhm; Test Voltage:600V; Voltage Rating:600V RoHS Compliant: NA 12k × 8位CMOS 3.0伏只,统一部门快闪记忆
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AMIC Technology Corporation AMIC Technology, Corp.
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EVDXXXX EVD9P2S5ZT20 EVD15F00000 EVD15F0000S EVD15 |
Quad 2-input positive-AND gates 14-SOIC 0 to 70 Hex inverters with open collector outputs 14-SOIC 0 to 70 Replaced by PTH05020W : 1.075 TO 1.85V 20-A 5V-INPUT PROGRAMMABLE ISR 27-SIP MODULE -40 TO 85 Replaced by PT6911 : 16-Bit Schottky Barrier Diode Bus-Termination Array 20-PDIP 0 to 70 Coaxial Cable; Coaxial RG/U Type:405; Impedance:50ohm; Conductor Size AWG:24; No. Strands x Strand Size:Solid; Jacket Color:Black; Leaded Process Compatible:Yes; Voltage Nom.:300V RoHS Compliant: Yes 军事素质可去联系,微 D连接 Coaxial Cable; Impedance:50ohm; Conductor Size AWG:29; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes 军事素质可去联系,微 D连接 3.3-V ABT Octal Registered Transceivers With 3-State Outputs 24-SOIC -40 to 85 军事素质可去联系,微 D连接 Coaxial Cable; Impedance:75ohm; Conductor Size AWG:29; No. Strands x Strand Size:Solid; Leaded Process Compatible:Yes RoHS Compliant: Yes 军事素质可去联系,微 D连接 CONN HEADR 100PS DL .05 R/A SMD 军事素质可去联系,微 D连接 3.3-V ABT Octal Edge-Triggered D-Type Flip-Flops With 3-State Outputs 20-SOIC -40 to 85 军事素质可去联系,微 D连接 2.5V/1.5V, 6A 6A 5V/3.3V-Input Dual-Output ISR 27-SIP MODULE -40 to 85 军事素质可去联系,微 D连接 128 x 128 pixel format, LED Backlight available 军事素质可去联系,微 D连接 3.3-V ABT Octal Transparent D-Type Latches With 3-State Outputs 20-TSSOP -40 to 85 军事素质可去联系,微 D连接 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor 军事素质可去联系,微 D连接 3.3-V ABT Octal Buffers/Drivers With 3-State Outputs 20-TSSOP -40 to 85 军事素质可去联系,微 D连接 3.3-V ABT Octal Edge-Triggered D-Type Flip-Flops With 3-State Outputs 20-SO -40 to 85 军事素质可去联系,微 D连接 Quad 2-input positive-NAND gates 14-PDIP 0 to 70 军事素质可去联系,微 D连接 3.3V/1.8V 10 Amp 5V-Input Dual Output ISR 23-SIP MODULE -40 to 85 军事素质可去联系,微 D连接 3.3/1.5Vout 25W 5V-Input Adjustable Dual Output ISR 23-SIP MODULE -40 to 85 军事素质可去联系,微 D连接 2.5V/1.8V, 6A 6A 5V/3.3V-Input Dual-Output ISR 27-SIP MODULE -40 to 85 军事素质可去联系,微 D连接 3.3V/2.5V 11 Amp 5V-Input Dual Output ISR 23-SIP MODULE -40 to 85 军事素质可去联系,微 D连接 3.3/2.5Vout 25W 5V-Input Adjustable Dual Output ISR 23-SIP MODULE -40 to 85 军事素质可去联系,微 D连接 Octal Buffers and Line Drivers With 3-State Outputs 20-PDIP 0 to 70 军事素质可去联系,微 D连接 3-line to 8-line decoder / demultiplexer 16-SOIC 0 to 70 军事素质可去联系,微 D连接 Octal Buffers And Line Drivers With 3-State Outputs 20-SOIC 0 to 70 军事素质可去联系,微 D连接 Hex Inverters 14-TSSOP -40 to 85 军事素质可去联系,微 D连接 3.3-V ABT Octal D-Type Flip-Flops With Clear 20-SOIC -40 to 85 军事素质可去联系,微 D连接 Quad 2-input positive-NAND gates 14-SO 0 to 70 军事素质可去联系,微 D连接 Triple 3-input positive-NAND gates 14-SO 0 to 70 军事素质可去联系,微 D连接 3.3-V ABT Octal Bus Transceivers With 3-State Outputs 20-BGA MICROSTAR JUNIOR -40 to 85 军事素质可去联系,微 D连接 3.3-V ABT Octal Bus Transceivers With 3-State Outputs 20-SOIC -40 to 85 军事素质可去联系,微 D连接 3.3-V ABT Octal Transparent D-Type Latches With 3-State Outputs 20-SO -40 to 85 军事素质可去联系,微 D连接 Hex Inverters 14-VQFN -40 to 85 军事素质可去联系,微 D连接 3.3-V ABT Octal Edge-Triggered D-Type Flip-Flops With 3-State Outputs 20-SSOP -40 to 85 军事素质可去联系,微 D连接 3.3-V ABT Octal Buffers/Drivers With 3-State Outputs 20-SOIC -40 to 85 军事素质可去联系,微 D连接 3.3-V ABT Octal Buffers/Drivers With 3-State Outputs 20-SSOP -40 to 85 军事素质可去联系,微 D连接 Circular Connector; Body Material:Aluminum; Series:PT00; No. of Contacts:16; Connector Shell Size:20; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Pin; Insert Arrangement:20-16 军事素质可去联系,微 D连接 12-Bit Schottky Barrier Diode Bus-Termination Array 16-SOIC 0 to 70 军事素质可去联系,微 D连接 Hex inverters 14-PDIP 0 to 70 军事素质可去联系,微 D连接 Hex inverters 14-SOIC 0 to 70 军事素质可去联系,微 D连接 POT 200K OHM THUMBWHEEL CERM ST 军事素质可去联系,微 D连接 ; Sensor Input Type:Laser; Sensing Range Max:1m 军事素质可去联系,微 D连接 DIODE SWITCHING DUAL COMMON-ANODE 75V 150mA-Io 200mW 4ns-trr SOT-323 3K/REEL 军事素质可去联系,微 D连接 3.3V/1.2V, 6A 6A 5V-Input Dual-Output ISR 27-SIP MODULE -40 to 85 军事素质可去联系,微 D连接 Circular Connector; Body Material:Aluminum; Series:PT00; No. of Contacts:6; Connector Shell Size:18; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Pin; Insert Arrangement:18-91 军事素质可去联系,微 D连接 DIODE ZENER SINGLE 200mW 9.1Vz 5mA-Izt 0.0608 0.5uA-Ir 6 SOD-323 3K/REEL 军事素质可去联系,微 D连接 -5.2Vout 12W 5V-Input Adjustable Plus to Minus Voltage Converter 23-SIP MODULE 0 to 85 军事素质可去联系,微 D连接 -5.2Vout 12W 3.3V-Input Adjustable Plus to Minus Voltage Converter 23-SIP MODULE 0 to 85 军事素质可去联系,微 D连接 MILITARY QUALITY REMOVABLE CONTACT, SUBMINIATURE-D CONNECTORS 军事素质可去联系,微 D连接 ; Interface Type:Serial, SPI; Kit Contents:Evaluation Board, 32K RAM, 8K EEPROM, DB-9 Serial Cable, CD, Documents; For Use With:MC68HC11E9 军事素质可去联系,微 D连接 Dual 4-input positive-NAND 50-Ohm line drivers 14-PDIP 0 to 70 Dual 4-input positive-NAND 50-Ohm line drivers 14-SOIC 0 to 70 Quad 2-input positive-NAND gates 14-SOIC 0 to 70 3.3-V ABT 32-Bit Edge-Triggered D-Type Flip-Flop with 3-State Outputs 96-LFBGA -40 to 85 3.3-V ABT Octal Edge-Triggered D-Type Flip-Flops With 3-State Outputs 20-TSSOP -40 to 85 3.3-V ABT Octal D-Type Flip-Flops With Clear 20-SO -40 to 85 3.3-V ABT Octal D-Type Flip-Flops With Clear 20-SSOP -40 to 85 3.3-V ABT Octal Buffers/Drivers With 3-State Outputs 20-SO -40 to 85 Replaced by PTH12010W,PTH08T220W : 1.1 to 1.85V 14A 12V-Input Programmable ISR 23-SIP MODULE Replaced by PTH05010W,PTH08T220W : 3.3V/2.5V, 6A 6A 5V-Input Dual-Output ISR 27-SIP MODULE -40 to 85 3.3/1.8Vout 25W 5V-Input Adjustable Dual Output ISR 23-SIP MODULE -40 to 85 SMT-AL(V-CHIP) RoHS Compliant: NA 3.3-V ABT Octal Bus Transceivers With 3-State Outputs 20-TSSOP -40 to 85 Dual voltage-controlled oscillators 16-SOIC 0 to 70 Octal buffers and line drivers 20-SOIC 0 to 70 3.3V/1.8V, 6A 6A 5V-Input Dual-Output ISR 27-SIP MODULE -40 to 85 Hex inverters with open collector outputs 14-SO 0 to 70 DISC CERAMIC CAPACITOR Replaced by PTN78020H : Replaced by PTN78020W : MILITARY QUALITY REMOVABLE CONTACT, CONNECTORS MILITARY QUALITY REMOVABLE CONTACT, SUBMINIATURE-D CONNECTORS
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List of Unclassifed Man... List of Unclassifed Manufac... Murata Manufacturing Co., Ltd. Electronic Theatre Controls, Inc. http:// List of Unclassifed Manufacturers ETC[ETC]
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A29L004ATX-70F A29L004ATL-0F A29L004ATL-90 A29L004 |
512K X 8 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory 12k × 8位CMOS 3.0伏只,引导扇区闪 Circular Connector; No. of Contacts:3; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:16; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:16-7 RoHS Compliant: No MS3106A16-10PX Replaced by PT78ST106,PT78NR106 : 6Vout 1.5A Wide Input Positive Step-Down ISR 3-SIP MODULE -40 to 85 AB 3C 2#16 1#8 SKT PLUG MS3106A16-7PW ER 16C 16#16 SKT RECP ER 35C 35#16 PIN RECP
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http:// AMIC Technology, Corp. AMIC Technology Corporation
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